Electrical characterization of MOSFETS with ultrathin SiON gate dielectric

The aim of this paper is extensive electrical characterization of MOS devices with ultrathin SiON gate dielectric. I-V characteristics are measured and basic transistor parameters (threshold voltage, DIBL, subthreshold swing and series S/D resistance) are extracted and their dependence on channel length investigated. Moreover, the dependence of gate current on channel length and the quality of the dielectric-silicon interface are studied.