Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique

A new technique to enhance the metal segregation at NiSi/Si interface for reducing contact resistance in source/drain electrodes is proposed. It is demonstrated that metal segregation at the junction of pre-amorphized NiSi/Si using ion-implantation leads to reduction of Schottky barrier height by ≫0.2eV. This modulation width is far beyond the previous metal segregation technique [1] and allows 90% reduction of contact resistance in source/drain junctions.