Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond

Si:C layers under non-doped-Si epitaxial channel (Epi-channel) produces steep channel profile for 25 nm-L
_G
nMOSFET. Si:C layers work as the dopant-diffusion-barriers from the boron doped regions. Moreover, retrograde Halo profiles are also realized in this structure. Steep channel profiles at scaled device are confirmed, and the benefits of its profile at L
_G
of 25 nm are discussed.