Experimental study of single source-heterojunction MOS transistors (SHOTs) under quasi-ballistic transport

In this study, we have experimentally demonstrated the high performance of the single source heterojunction MOSFETs (SHOTs) without the energy spike of the drain heterojuction. We have studied the influence of the drain energy spike on the MOSFET performance. Moreover, we have clarified the physical mechanism for the high velocity electron injection in SHOTs, through the lattice temperature dependence of the electron velocity, comparing with that of strained-SOIs (SSOIs).