The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique

The impact of gate dielectric nitridation methodology on time, temperature and field dependence of NBTI in SiON p-MOSFETs is studied using Ultra-Fast On-The-Fly I_DLIN technique with 1mus resolution. It is shown that PNO devices with proper PNA show lower degradation magnitude, higher field dependence and therefore higher safe operating voltage compared to RTNO and PNO devices with improper PNA despite atomic N% is higher in PNO devices with proper PNA.