GaN Islands density growth kinetics on (0001) AlN surface by Ammonia molecular-beam epitaxy

At the present work 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The initial stages of the GaN growth on the flat AlN surface were monitored by a real-time reflection high-energy electron diffraction (RHEED) technique. Exponential 3D-nucleation kinetics of GaN was experimentally revealed. Experimental results are discussed in the frame of scaling equation for the islands density.