Enhancing the light extraction of InGaN light-emitting diodes by patterning the dicing streets

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum efficiency (EQE) of the LEDs at 20 mA increased by 12.9% because of the roughening of the passive region which enhanced the escape cone.