Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

The spatial spread of interface states generated by hot-electron effect in the nMOSFET is shown to be significantly increased by self-heating. Substantial generation of interface states in the
channel

region
of the wide-channel strained-Si/SiGe nMOSFET, which suffers from significant self-heating, is observed at a very short stress time. The initial spread of the interface damage is significantly reduced in the narrow-channel strained-Si device, which exhibits a much lesser degree of self-heating. Evidence suggests that the increased spread in the spatial distribution of the interface damage is due to a small fraction of
excess
ldquosuperhotrdquo electrons, which have gained additional energy from phonon absorption.