Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good
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characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal-semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture.