The study of p-type material based on Sn-rich Mg2Si-Mg2Sn solid solution

In this paper the results of the study of transport properties of some Mg
₂
Si
_x
Sn
_1-x
solid solutions are presented. The samples of various composition (Mg
₂
Si
_x
Sn
_1-x
, x = 0.25-0.4) and of wide range of hole concentration (up to 5 10
²⁰
cm
^-3
) have been prepared. Temperature dependences of Seebeck and Hall coefficients and electrical conductivity have been measured in the range from 80 up to 800 K. The parameters of band structure and conduction mechanism (energy gap, hole mobility and effective mass and the ratio of electron mobility to that of holes) were determined from these measurements. The features of band structure and conduction mechanism are discussed.