Reliability of advanced embedded non-volatile memories: The 2T-FNFN device

The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can be determined by studying large flash arrays. Furthermore, the reliability challenges coming along with technology scaling are discussed.