A study of LBO effects in a 40 nm SA-MSCFET

This work aims to examine and analyze carefully the effects of block oxide length (L
BO
) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs). Because the research of the block oxide height (H
BO
) has already been done as described in [1], in this study we will focus on the influence of L
BO
on the SA-MSCFET. Also, some preliminary characteristics of the new configuration developed are demonstrated by using TCAD simulations.