TMOS novel uncooled sensors — theory and practice

This paper presents a novel approach, where the sensor is implemented as MOS transistor on SOI wafer, and is used as uncooled thermal detector (TMOS). The sensor is operated in subthreshold region where the current has exponential dependence on temperature with current sensitivities exceeding 4%/K. The fabrication of the sensor using standard and reliable CMOS-SOI technology combined with monolithic integration of readout circuitry and very simple post-processing, guaranties low production cost and predicts high performance.