Effect of technology scaling on RF performance of the transistors fabricated by standard CMOS technology

Cut-off frequency (f
_T
) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H
₂₁
) and noise (flicker and thermal) is improved with scaling down technology. Power gain (G
_u
) increase is slow down and even saturated at 45 nm as technology advances. Such saturation in power gain is attributed to rapid increase in g
_ds
(drain conductance). Additional efforts are required to reduce g
_ds
for continuous improvement in power gain with the scaling. V
_th
optimization can be one of options to achieve better g
_ds
.