Width dependent degradation of polycrystalline silicon TFTs

The DC stress induced device degradation of sequential lateral solidification (SLS) polysilicon thin film transistors (TFTs) was investigated by monitoring the threshold voltage in the linear regime of operation. Devices with different channel widths were compared. It was observed that the degradation of device parameters during hot carrier experiments was dependent on the channel width. The origin of this dependence is ascribed to self-heating effects.