SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.