Analytical model of a Si TFT with cylindrical source and drain

In this paper a new analytical model of a silicon thin film transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text, some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.