Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model

In this study, we propose a systematic method to separate the hole trapping from measured V
₁
shift, thus giving the ideal interface trap generation behavior without measurement disturbance. Three stages of interface trap generation have been illustrated with the analytical H-H
₂
NBTI reaction-diffusion model, and the hole trapping has also been verified with its voltage-enhanced and temperature-insensitive properties. Finally, the PMOS device lifetime extrapolation without considering the hole trapping might lead to significant lifetime overestimation.