Current leakage evolution in partially gate-ruptured power MOSFETs

The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.