Analytical model of radiation response in FDSOI MOSFETS

It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted silicon-on-insulator (FDSOI) MOSFET technologies. In this paper, an analytical model for these radiation response characteristics is proposed. The charge coupling between the front and back gates is demonstrated analytically using closed-form expressions for the back-gate threshold voltage as a function of trapped charge in the buried oxide and front gate voltage.