Enhanced PMOS NBTI degradation due to halo implant channeling

NBTI is a serious reliability concern in state of the art PMOSFET devices. The implementation of nitrided gate oxides to prevent boron penetration has aggravated the NBTI issue. Because of relaxation effects careful stress and measurement techniques (ldquoOn-the-Flyrdquo) must be used for reliable estimation of device lifetime. This abstract describes a unique enhanced NBTI degradation phenomenon in which NBTI induced V
_T
degradation was determine to be directly proportional to the initial V
_T
of the device. Electrical results from special test structures identified halo implant channeling as causing the enhanced NBTI induced degradation behavior.