Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

Wide dispersions of memory switching parameters are observed in resistive random access memory based on Al/Cu
_x
O/Cu structure. Moreover, the switching instability induced by these dispersions is studied. In this letter, a ramped-pulse series operation method is put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of V
_reset
by optimizing the amplitude of pulse is proposed further. The write-read-erase-read operations can be over 8 times10
³
cycles without degradation by using the new operation mode. The role of Joule heating behind this behavior of Al/Cu
_x
O/Cu device is discussed.