Effect of Resputtering on Perpendicular Magnetic Anisotropy in Amorphous GdCo Thin Films

In order to control resputtering during the sputtering formation of amorphous thin films, a wire mesh in DC sputtering equipment were used to suppress resputtering, and the effects of resputtering on magnetic anisotropy in GdCo films were studied. The measured values for Keff and M
s
indicated that nearly all films had in-plane magnetizations, and under the film deposition conditions, through which resputtering did not occur, a perpendicular magnetic anisotropy was not induced. Possible reasons for this include a low deposition rate (~15 Å/min) and small film thicknesses (650 Å).