Proton induced upsets in the low altitude polar orbit

The authors report on observations of single-event upsets occurring in large dynamic NMOS and static CMOS memories onboard the low-altitude, polar orbiting UOSAT-2 satellite. The strong localization of these upsets to the South Atlantic region leads to the conclusion that the majority of upsets in these devices are caused by nuclear reactions involving energetic radiation-belt protons encountered in the South Atlantic anomaly. The dynamic RAM upset rates are in agreement with the predictions of W.L. Bendel and E.L. Peterson (1983). Static CMOS RAMs are also found to be sensitive to proton-induced upsets, but presently there are not enough ground test data to make predictions.<
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