Effects of pulse repetition frequency on the immunity of silicon BJT against microwave interference

The microwave pulse interference may cause permanent damage to silicon bipolar junction transistor (BJT). The effects of pulse repetition frequency (PRF), one of the important parameters of microwave interferences, are studied in this paper. A theoretical model is proposed, on the basis of which an approximate formula is presented for typical low-power silicon BJT. A prediction made by the proposed formula concludes that, as PRF does not exceed several kHz, it has no obvious influence.