SiC epitaxial layers grown by chemical vapor deposition

Epitaxial growth of 4H-SiC is reported in a horizontal low-pressure hot-wall (LP-HW-CVD) reactor at temperature 1580degC and 100 mbar. The substrates were Si-face, n-type, 4H-SiC oriented 8deg off-axis toward the [1 12 macr 0] direction. Surface of SiC epitaxial layers were studied. Atomic force microscope (AFM) and scanning electron microscopy (SEM) were used to investigate the epitaxial layer surface. Fourier transform infrared spectroscopy (FTIR) was used to analysis epitaxial layers thickness. The surface roughness of the samples was analyzed using atomic force microscopy (AFM). Current-voltage (C-V) measurements determined the doping concentration in the films. The structural quality was assessed by X-ray diffraction rocking curves.