Flexibly controllable Sub-Second Flash Lamp Annealing

We have developed Sub-Second Annealing technology (SSA) to complement Milli-Second Annealing (MSA: 1–10ms) and spike-RTA (sRTA: 1000ms) annealing time. By using unique IGBT circuit, we have succeeded to create 40ms Flash Lamp Annealing (FLA) with milli-second soak profile. Simulation shows that heat profile is also controllable like RTA. We used this SSA technology to anneal Blanket wafer and have found that SSA can activate dopant and improve EOR defect recovery without dopant diffusion.