Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemicalvapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p
⁺
n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n
⁺
regions.