Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique

A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.