Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2

We report on the experimental demonstration of a novel n-channel GaN hybrid MOS-HEMT realized on AlGaN/GaN heterostructure on sapphire substrate. This enhancement-mode MOS-gated heterojunction transistor, with 3 mum channel length and 20 mum RESURF length, exhibited a specific on-resistance as low as 20 mOmega-cm
²
. Simulations indicated the strong dependence of device breakdown voltage on the doping and concentration of the bottom p-GaN layer and its important role in reducing the surface electric field to suppress oxide breakdown.