High Conductivity δ-Doped Single Crystal Diamond Schottky m-i-p+ Diodes

High conductivity 2 kV single crystal diamond Schottky metal-intrinsic-p
⁺
(m-i-p
⁺
) diodes utilising horizontally and vertically oriented thin highly boron-doped delta layers are presented in this work. Numerical analysis adopting diamond specific models previously reported indicate that these structural modifications drastically improve the forward performance of diamond Schottky diodes, realising current densities up to 50 A/cm
²
for a forward bias of 3 V, without compromising the reverse performance of the device. This is a 20 fold performance improvement from the uniformly intrinsic diamond Schottky diode.