Time-dependent degradation of MOSFET channel mobility following pulsed irradiation

A model is presented for the time-dependent mobility of channel carriers in MOSFETs following pulsed irradiation. It includes the effects of both trapped hole ( Delta N/sub OT/) removal (annealing) and the time-dependent buildup of interface traps ( Delta N/sub IT/). Several sets of time-resolved transconductance data beginning at 10/sup -4/ s are examined for n-channel devices in light of the model. It is shown that, even though Delta N/sub IT/ generally dominates the change in mobility at late time, at early times (>