Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications

In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.