Electrical Characterization and Compact Modeling of MOSFET body effect

In this paper we report on the impact of the depth dopant profile on MOSFETs threshold voltage shifts induced by bulk biases. This body effect is characterized with an original procedure using experimental data, but also a series of TCAD simulations, including advanced process simulation of the dopant distribution along the depth of the transistor. Finally the impact of the doping profile non-uniformity on the body effect is accounted for within the framework of a charge sheet model.