Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices

We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI nMOSFET with 145 and 11 nm thick BOX.