An Improved Method of Parameter Abstraction for a Novel Diode Reverse Recovery Model in Time-Domain Simulation

Based on the Lauritzen and Ma model, diode model with reverse recovery characteristic can be built following a modeling procedure presented in the authors' previous paper. But using the original modeling procedure, the diode model will cause large error on peak reverse current in some cases. Defect analysis and improvement of the modeling procedure are present in this paper. By revealing that the averaging of tau and T
_M
in different conditions causes the diode model with large error on peak reverse current evaluation, new tau and T
_M
derivation method is proposed to improve the modeling procedure. Following the proposed modeling procedure, the diode model can be built and fits in with different implementation in dc-dc converters and PFC circuit. Simulation and hardware tests are done to verify that the diode models with the proposed modeling procedure are greatly improved in the peak reverse current in different implementation cases.