New low reverse recovery charge (QRR) high-voltage silicon diodes provide higher efficiency than presently available ultrafast rectifiers

A new generation of 600 V, Silicon rectifiers that have low reverse recovery charge (Qrr) and a high Softness factor are described. The new rectifiers can realize higher boost converter stage efficiency than any other available silicon diodes. This paper presents the characteristics of the new diodes and shows their performance in several application circuits. Relevant measurements, such as operating efficiency and component temperatures were observed and recorded, and are presented. Lastly, some useful techniques are described, that may help optimize CCM boost converter operation in order to maximize efficiency, when using diodes that have low Qrr and a high softness factor.