Low Stress PECVD SiNx Process for Biomedical Application

This paper presents a development in producing low residual stress PECVD SiN
_x
layers at high deposition rates and their biomedical. The key factor in the novel process is the employment of up to 600 W high powers in high frequency (13.56 MHz). In conjunction with the adjustment of the reactant gases composition, the residual stress can he tuned to 4MPa and high deposition rate up to 320 nm/min can be achieved. Moreover, by using this optimized process, an 11 μm thick low stress SiN
_x
layer was produced, which will be used to fabricate large area windows for cell culture. Finally, a cell culture test by cultivating mouse stem cells onto porous membrane by the low stress PECVD SiN
_x
layers also indicated that these layers are biocompatible and are suitable for biomedical applications.