Generation of terahertz pulsed radiation from photoconductive emitters using 1060 nm laser excitation

In this paper we report experimental results on the generation of broadband terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3-4 THz, the signal to noise ratio was more than one hundred.