Performance of SiC Schottky diodes

Performance of silicon carbide (SiC) Schottky diodes driven by large-signal square wave voltage is evaluated. The voltage equations for the turn-on and turn-off transitions of the diode are derived assuming a linear junction capacitance, C
_j
. The turn-on and turn-off transition voltage waveforms are verified practically for a square wave pulsating between positive 10 V and negative 10 V. The diode current waveforms for 100 kHz, 1 MHz, 2 MHz and 3 MHz are analyzed and presented. For the experiment, CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. The theoretical and experimental results were in good agreement. PSPICE simulation results comparing the performance of CSD10060, MUR1560, 600 V, 10 A ultra fast recovery silicon (Si) junction diode and MSR860, 600 V, 8 A soft recovery Si junction diode is presented.