Fabrication of aligned CNT bundle emitters in different density

Aligned CNT bundle emitters in different density are prepared by MPCVD. The reaction pressure is the most important factor, which is responsible for the density of CNT bundles. Based on our results, the etching time of the H2 plasma has much effect on the aligned growth of the CNT bundles. Controlled growth of the aligned CNT bundles in different density is necessary for the application of CNTs in FETs. Further measurements on the FE properties of the CNT bundles in different density are still on research.