Preparation and characteristics of insulator layers for field emission display device

In this study, insulator layers prepared by e-beam evaporation were investigated. Attempts were made to prepare SiO
₂
and Al
₂
O
₃
multi-layer stack structure to improve the dielectric property of the gate insulator layer prepared in large area. Insulator layers consisting of various composition and numbers of layers were prepared and their dielectric properties were compared.