Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode

We fabricated the FEAs of which emitters are covered with HfN films, and showed relatively good electron emission properties including lifetime and operation at the elevated temperatures up to 100degC. The fabricated device showed relatively good electron emission properties. Typically, electron emission started at V
_EG
of about 40 V, and the current of 1 muA was observed at V
_EG
of 60 V. Some of the 2,025-tip FEA yielded a high current of 100 muA at V
_EG
of 120 V.