Field emission from vertically aligned silicon nanotubes

In the present work, diamond nanoparticles were used as nanomasks for SiNTs fabrication. The diamond nanoparticles with a diameter of about 100 nm were uniformly dispersed on the surface of a Si wafer as masks. The SiNTs were synthesized through a dry etching processing in an inductively coupled plasma (ICP) system. It is concluded that the field emission characteristics of the SiNTs has been performed, the turn-on the threshold fields for field electron emission are -7.9 MV/m and -13.6 MV/m, respectively.