Low temperature synthesis of two-dimensional carbon nanosheets as a field electron emission material

In this abstract we report carbon nanosheet synthesis at substrate temperatures lowered by 100-150 degC when utilizing C
₂
H
₂
, rather than CH
₄
, as a precursor. Typical C
₂
H
₂
carbon nano-sheets were successfully deposited on silicon substrates at 550-600 degC substrate temperatures, with 80-100% C
₂
H
₂
in H
₂
concentrations at a fixed 5 seem total gas flow rate, 30-40 mTorr total gas pressures, and 1000 W input RF power.