A Buried Giga-Ohm Resistor(BGR) Load Static RAM Cell

This paper will disclose a memory cell technology developed for high density and high speed static RAM's. The memory cell features a buried giga-ohm resistor ( BGR ) load structure which was formed by the high performance CMOS(Hi-CMOS) process. For high density static RAM's, memory cells and peripheral circuits are keys to achieve high packing density, 1) high speed and low dissipation power. Therefore, the CMOS process has been mainly employed to reduce an active power 2) and alpha particle induced soft errors. A packing density and a stand-by power of the static RAM is determined mainly by memory cells which are required to be fabricated by the CMOS process.