SIMOX Technology for CMOS LSIs

SIMOX technology(Separation by Implanted Oxygen) has been proposed to fabricate CMOS devices(l,2,3). In this technology silicon islands are completely surrounded by the buried and thermally-grown SiO2 layers, which realize high-performance CMOS devices with simple fabrication process due to the good mono-crystalline state of the active region, reduction of parasitic capacitance and effective structure free from auto-doping and latch-up. In this work, application of SIMOX to CMOS LSIs was successfully carried out using LOCOS, double metal layer and polysilicon gate technologies with a 1.5μm effective channel length.