A Novel CMOS Process Utilizing After-Gate-Implantation Process

CMOS has become the dominant VLSI technology because of its speed/power performance and high noise margin. Drawbacks in CMOS are complicated fabrication process and limitation in packing density due to latch-up. To solve these problems, a novel CMOS process, which uses only 7 photo masks, has been developed, utilizing an after-gate-implantation (AGI) process, in which all implantations (well, channel doping and source/drain) are performed after gate electrodes are patterned. This paper describes basic characteristics for CMOS devices fabricated by the AGI process.