High Speed CMOS Structure with Optimized Gate Work Function

With decreasing the minimum feature size of MOSFTTs down to half micron, mobility degradation due to the increased vertical surface electric field will be distinguished in surface channel MOSFETs, while short channel effect in buried channel MCOFETs will be over the acceptable level. Therefore, for future scaled CMOS technology, it is indispensable to study MOSFET characteristics depending upon the gate work function, i.e. channel type of MOSFETs.