Submicron MLDO NMOSFETs for 5V Operation

Hot carrier induced degradation is the most serious constraint in designing submicron NMOSFETs, especially under constant power supply voltage, Vcc=5V. Obviously reduction of the supply voltage is the solution. However, in practice, resulting poor performance and interface incompatibility still strongly require 5V operation. An LDD structure is often refered as the possible and most promising candidate, while rather poor reliability results have been reported J.